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| SMD Type High-current gain Power Transistor 2SD2318 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High DC current gain. Low saturation voltage. +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Tc = 25 Junction temperature Storage temperature * Pw=100ms. Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 80 60 6 3 4.5 4.5 1 15 150 -55 to +150 Unit V V V A A(Pulse)* A W W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50iA IC=1mA IE=50iA VCB=80V VEB=6V Testconditons Min 80 60 6 100 100 1.0 1.5 560 50 60 1800 MHz pF Typ Max Unit V V V iA iA V V VCE(sat) IC=2 A, IB=0.05A VBE(sat) IC=2 A, IB=0.05A hFE fT Cob VCE=4V, IC=0.5A VCE=5V, IE= -0.2A, f=10MHz VCB=10V, IE=0A, f=1MHz hFE Classification Rank hFE U 560 1200 V 820 1800 3.80 www.kexin.com.cn 1 |
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